PART |
Description |
Maker |
GP801DDM18 |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
|
Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V,VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD Ultra-Low V IGBT with Diode
|
IXYS, Corp. IXYS Corporation
|
IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
IXSH20N60U1 IXSH20N60AU1 |
Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
Q67040S4714 IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
PBSS4032PT PBSS4032PT-215 |
30 V, 2.4 A PNP low VCEsat (BISS) transistor 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 ?18 December 2009
|
NXP Semiconductors
|
BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
IXDP20N60BD1 IXDP20N60B |
IGBT Discretes: NPT IGBT High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
APT20GN60SG APT20GN60BG |
NPT IGBT & Trench IGBT IGBT w/ anti-parallel diode
|
Microsemi
|